28.5% Minimum Average Efficiency
EMCORE's 2nd Generation Triple-Junction (BTJ) InGaP/InGaAs/Ge Solar Cells with n-on-p polarity is built on a 140-mm uniform thickness Ge substrate. It has a lowest solar cell mass of 84 mg/cm2 and is fully space-qualified with proven flight heritage.
Features

• Excellent radiation resistance with P/Po = 0.89 @ 1-MeV, 5E14 e/cm2 fluence
• Designed to accept corner mounted silicon bypass diode for individual cell reverse
• Good mechanical strength for reduced attrition during assembly and laydown
• Weldable or solderable contacts
• Standard and custom sizes available

28.0% Minimum Average Efficiency
EMCORE's Triple-Junction With Monolithic Diode (BTJM) InGaP/InGaAs/Ge Solar Cell with n-on-p polarity is built on a 140-mm uniform thickness Ge substrate. It has a lowest Solar Cell Mass of 84 mg/cm2 and is the highest efficiency flight cell with monolithic diode in the market.
Features

• Fully space qualified InGaAs monolithic diode protection
• In production at Emcore since 2002
• Excellent radiation resistance with P/Po = 0.89 @ 1-MeV, 5E14 e/cm2 fluence
• Excellent mechanical strength for reduced attrition during assembly and laydown
• Weldable or solderable contacts
• Standard and custom sizes available

27.5% Minimum Average Efficiency
EMCORE's Advanced Triple-Junction (ATJ) InGaP/InGaAs/Ge Solar Cells with n-on-p polarity is built on a 140-µm uniform thickness Ge substrate. It has a lowest solar cell mass of 84 mg/cm2 and is fully space-qualified with proven flight heritage in LEO and GEO environments.
Features

• Excellent radiation resistance with P/Po = 0.89 @ 1-MeV, 5E14 e/cm2 fluence
• Designed to accept corner mounted silicon bypass diode for individual cell reverse bias protection
• Good mechanical strength for reduced attrition during assembly and laydown
• Weldable or Solderable contacts
• Standard and custom sizes available
• Available at EPI, cell, CIC or panel configuration

27.0% Minimum Average Efficiency
EMCORE's Advanced Triple-Junction (ATJ) InGaP/InGaAs/Ge Solar Cells with n-on-p polarity are built on a 140-mm uniform thickness Ge substrate. It has a lowest solar cell mass of 84 mg/cm2 and is fully space-qualified for GEO & LEO applications with proven flight heritage.
Features

• Fully Space-Qualified Monolithic Bypass Diode Protection
• Excellent radiation resistance with P/Po = 0.89 @ 1-MeV, 5E14 e/cm2 fluence
• Excellent mechanical strength for reduced attrition during assembly and laydown
• Weldable or Solderable contacts
• Standard and custom sizes available
• Available at EPI, cell, CIC or panel configuration